0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 marking marking 1am features epitaxial planar die construction absolute maximum ratings ta = 25 parameter symbol rating unit collector - base voltage v cbo 60 v collector - emitter voltage v ceo 40 v emitter - base voltage v ebo 6v collector current - continuous i c 0.2 a collector power dissipation p c 0.2 w junction temperature t j 150 storage temperature t stg -55to150 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collecto- base breakdown voltage v cbo ic= 100 a i e =0 60 v collector- emitter breakdown voltage v ceo ic= 1 ma i b =0 40 v emitter - base breakdown voltage v ebo i e =10 a i c =0 6v collector cut-off current ic bo v cb =60v,i e =0 0.1 a collector cut-off current ic eo v ce =30v,v be(off) =3v 50 na emitter cut-off current i ebo v eb =5v,i c =0 0.1 a v ce =1v,i c = 10ma 100 400 v ce =1v,i c = 50ma 60 collector-emitter saturation voltage v ce(sat) i c =50 ma, i b =5ma 0.3 v base - emitter saturation voltage v be(sat) i c =50ma,i b = 5ma 0.95 v delay time t d v cc =3.0v,v be =-0.5v 35 rise time t r i c =10ma,i b1 =-i b2 =1.0ma 35 storage time t s v cc =3.0v,i c =10ma 200 fall time t f i b1 =-i b2 =1.0ma 50 transition frequency f t v ce = 20v, i c = 10ma,f=100mhz 250 mhz dc current gain ns ns h fe sales@twtysemi.com 1 of 2 http://www.twtysemi.com 4008-318-123 kmbt3904 (mmbt3904) product specification
typical characteristics kmbt3904 (mmbt3904) fig.1 max power dissipation vs ambient temperature fig.2 input and output capacitance vs. collector-base voltage fig.3 typical dc current gain vs collector current fig.4 typical collector-emitter saturation voltage vs. collector current fig.5 typical base-emitter saturation voltage vs. collector current sales@twtysemi.com 2 of 2 http://www.twtysemi.com product specification 4008-318-123
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